RN2701JE(TE85L,F)
Nombor Produk Pengeluar:

RN2701JE(TE85L,F)

Product Overview

Pengeluar:

Toshiba Semiconductor and Storage

DiGi Electronics Nombor Bahagian:

RN2701JE(TE85L,F)-DG

Penerangan:

TRANS 2PNP PREBIAS 0.1W ESV
Penerangan Terperinci:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV

Inventori:

3695 Pcs Baru Asli Dalam Stok
12949828
Minta Sebut Harga
Kuantiti
Minimum 1
num_del num_add
*
*
*
*
(*) adalah wajib
Kami akan menghubungi anda dalam masa 24 jam
HANTAR

RN2701JE(TE85L,F) Spesifikasi Teknikal

Kategori
Bipolar (BJT), Array Transistor Bipolar, Pra-Biased
Pengeluar
Toshiba Electronic Devices and Storage Corporation
Pembungkusan
Tape & Reel (TR)
Siri
-
Status Produk
Active
Jenis Transistor
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Semasa - Pengumpul (Ic) (Maks)
100mA
Voltan - Pecahan Pemancar Pemungut (Maks)
50V
Perintang - Asas (R1)
4.7kOhms
Perintang - Pangkalan Pemancar (R2)
4.7kOhms
Keuntungan Arus DC (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Ketepuan Vce (Maks) @ Ib, Ic
300mV @ 250µA, 5mA
Semasa - Pemotongan Pemungut (Maks)
100nA (ICBO)
Kekerapan - Peralihan
200MHz
Kuasa - Maks
100mW
Jenis Pemasangan
Surface Mount
Pakej / Kes
SOT-553
Pakej Peranti Pembekal
ESV
Nombor Produk Asas
RN2701

Lembaran data & Dokumen

Helaian data
RN2701JE-06JE

Maklumat Tambahan

Pakej Standard
4,000
Nama lain
RN2701JE(TE85LF)DKR
RN2701JE(TE85LF)TR
RN2701JE(TE85LF)CT

Klasifikasi Alam Sekitar & Eksport

RoHS Status
RoHS Compliant
Tahap Sensitiviti Kelembapan (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Sijil DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Produk Berkaitan
diodes

DCX115EK-7-F

TRANS NPN/PNP PREBIAS 0.3W SC74R

rohm-semi

EMH51T2R

NPN+NPN DIGITAL TRANSISTOR(WITH

rohm-semi

EMH52T2R

NPN+NPN DIGITAL TRANSISTOR(WITH

rohm-semi

EMD72T2R

PNP+NPN DIGITAL TRANSISTOR (WITH