Nombor Produk Pengeluar:
RN1102MFV,L3F
Product Overview
Pengeluar:
Toshiba Semiconductor and Storage
DiGi Electronics Nombor Bahagian:
RN1102MFV,L3F-DG
Penerangan:
TRANS PREBIAS NPN 50V 0.1A VESM
Penerangan Terperinci:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Inventori:
13398 Pcs Baru Asli Dalam Stok
12889204
Minta Sebut Harga
Kuantiti
Minimum 1
Minimum 1
(*) adalah wajib
Kami akan menghubungi anda dalam masa 24 jam
Kami akan menghubungi anda dalam masa 24 jam
HANTAR
RN1102MFV,L3F Spesifikasi Teknikal
Kategori
Bipolar (BJT), Transistor Bipolar Pra-Bias Tunggal
Pengeluar
Toshiba Electronic Devices and Storage Corporation
Pembungkusan
Tape & Reel (TR)
Siri
-
Status Produk
Active
Jenis Transistor
NPN - Pre-Biased
Semasa - Pengumpul (Ic) (Maks)
100 mA
Voltan - Pecahan Pemancar Pemungut (Maks)
50 V
Perintang - Asas (R1)
10 kOhms
Perintang - Pangkalan Pemancar (R2)
10 kOhms
Keuntungan Arus DC (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Ketepuan Vce (Maks) @ Ib, Ic
300mV @ 500µA, 5mA
Semasa - Pemotongan Pemungut (Maks)
500nA
Kuasa - Maks
150 mW
Jenis Pemasangan
Surface Mount
Pakej / Kes
SOT-723
Pakej Peranti Pembekal
VESM
Nombor Produk Asas
RN1102
Lembaran data & Dokumen
Helaian data
Maklumat Tambahan
Pakej Standard
8,000
Nama lain
RN1102MFVL3F(BDKR-DG
RN1102MFVL3FDKR
RN1102MFV (TL3,T)
RN1102MFVL3FCT
RN1102MFV(TL3T)TR
RN1102MFV,L3F(B
RN1102MFVL3FTR
RN1102MFVL3F-DG
RN1102MFVTL3T
RN1102MFVL3F(BTR
RN1102MFVL3F(BTR-DG
RN1102MFV(TL3,T)
RN1102MFVL3F(BCT-DG
RN1102MFV(TL3T)CT
RN1102MFVL3F
RN1102MFV(TL3T)TR-DG
RN1102MFV,L3F(T
RN1102MFV(TL3T)DKR
RN1102MFV(TL3T)DKR-DG
RN1102MFVL3F(BDKR
RN1102MFV(TL3T)CT-DG
RN1102MFVL3F(BCT
Klasifikasi Alam Sekitar & Eksport
RoHS Status
ROHS3 Compliant
Tahap Sensitiviti Kelembapan (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Sijil DIGI
Produk Berkaitan
DDTC123JE-7-F
TRANS PREBIAS NPN 50V SOT523
RN2303,LF
TRANS PREBIAS PNP 50V 0.1A SC70
RN2114MFV,L3F
TRANS PREBIAS PNP 50V 0.1A VESM
