MJE181G
Nombor Produk Pengeluar:

MJE181G

Product Overview

Pengeluar:

onsemi

DiGi Electronics Nombor Bahagian:

MJE181G-DG

Penerangan:

TRANS NPN 60V 3A TO126
Penerangan Terperinci:
Bipolar (BJT) Transistor NPN 60 V 3 A 50MHz 1.5 W Through Hole TO-126

Inventori:

408 Pcs Baru Asli Dalam Stok
12853178
Minta Sebut Harga
Kuantiti
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MJE181G Spesifikasi Teknikal

Kategori
Bipolar (BJT), Transistor Bipolar Tunggal
Pengeluar
onsemi
Pembungkusan
Bulk
Siri
-
Status Produk
Active
Jenis Transistor
NPN
Semasa - Pengumpul (Ic) (Maks)
3 A
Voltan - Pecahan Pemancar Pemungut (Maks)
60 V
Ketepuan Vce (Maks) @ Ib, Ic
1.7V @ 600mA, 3A
Semasa - Pemotongan Pemungut (Maks)
100nA (ICBO)
Keuntungan Arus DC (hFE) (Min) @ Ic, Vce
50 @ 100mA, 1V
Kuasa - Maks
1.5 W
Kekerapan - Peralihan
50MHz
Suhu Operasi
-65°C ~ 150°C (TJ)
Jenis Pemasangan
Through Hole
Pakej / Kes
TO-225AA, TO-126-3
Pakej Peranti Pembekal
TO-126
Nombor Produk Asas
MJE181

Lembaran data & Dokumen

Lembaran Data
MJE181G
Lembaran Data HTML
MJE181G-DG
Helaian data
MJE170, 71, 72, 80, 81, 82

Maklumat Tambahan

Pakej Standard
500
Nama lain
ONSONSMJE181G
2156-MJE181G-OS
2832-MJE181G
MJE181GOS

Klasifikasi Alam Sekitar & Eksport

RoHS Status
ROHS3 Compliant
Tahap Sensitiviti Kelembapan (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075

Model Alternatif

NOMBOR BAHAGIAN
MJE181STU
PENGELUAR
Fairchild Semiconductor
JUMLAH TERSATU
4017
NOMBOR BAHAGIAN
MJE181STU-DG
HARGA UNIT
0.20
JENIS SUBSTITUSI
Direct
Sijil DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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